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PROFILE

Research Interests:

Photodetectors, particularly Single Photon Detectors.
Quantum communications, CV-QKD, Quantum Optics.
Optoelectronic devices based on embedded quantum dots.
Thin film growth and characterization for semiconductor device applications

Expertise:

Thin Film Deposition Technique	DC Magnetron Reactive Sputtering
Material Characterization	Hands-On Experience	Photoluminescence (PL) , PL-Excitation (PLE)
	Technical knowledge and analysis	HR-XRD
Device Characterization	I -V (T) Characterization, Spectral Response using FTIR, Photocurrent using FFT analyzer
Simulations and Software	Nextnano⁺⁺, Matlab (basics), Lumerical, Silvaco T-CAD, Origin, Microsoft Office
Optics Lab Experience	Hands-On with optical equipment for developing free space CV-QKD

Peer Reviewed Journals:

[1] Dongre, Suryansh, et al. "In-Situ Tailoring of Vertically Coupled InAs pip Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga Intermixing." ACS Applied Electronic Materials (2020) 2 (5), 1243-1253. (I. F. 4.4) (Q1)

[2] Dongre, Suryansh, et al. "Optimization of vertical strain coupling in InAs/GaAs pip quantum dot infrared photodetectors with applied growth strategy." Journal of Luminescence, vol. 226 (2020): 117499. (I. F. 3.6) (Q2)

[3] S. Dongre, J. Saha, D. Panda, D. Das, S. Reddy, S. Paul, S. Mondal, S. A. Gazi, S. Chakrabarti, A complete comprehension of InGaAs capping layer deposition on InAs quantum dots by comparison of simulations, luminescence and X-ray diffraction, Journal of Crystal Growth 629 (2024) 127516. (I. F. 1.8) (Q2)

[4] Samishta Choudhary, Suryansh Dongre, Debiprasad Panda, Debabrata Das, Subhananda Chakrabarti, Investigation of inter-dot tunnelling effect in hybrid coupled QDs heterostructures for short-wave infrared detection (SWIR) application, Journal of Alloys and Compounds 1010, (2025) 177612. (I. F. 5.8) (Q1)

[5] R Gourishetty, D Panda, S Dongre, J Saha, SA Gazi, S Chakrabarti, Hybrid strain-coupled multilayer SK, and SML InAs/GaAs quantum dot heterostructure: Enabling higher absorptivity and strain minimization for enhanced optical and structural characteristics, Journal of Luminescence 233, (2021), 117899. (I. F. 3.6) (Q2)

[6] SR Shriram, R Gourishetty, D Panda, D Das, S Dongre, J Saha, et al., Subsiding strain-induced In-Ga intermixing in InAs/In_xGa_1-xAs sub-monolayer quantum dots for room temperature photodetectors, Infrared Physics & Technology 121, (2022), 104047. (I. F. 3.1) (Q2)

[7] R Gourishetty, D Panda, S Dongre, SA Gazi, S Chakrabarti, Evaluation of In (Ga) As capping in a multilayer coupled InAs quantum dot system: Growth strategy involving the same overgrowth percentage, Journal of Luminescence 239, (2021), 118340. (I. F. 3.6) (Q2)

[8] MR Mantri, D Panda, D Das, S Mondal, S Paul, SA Gazi, R Kumar, et al., Improved carrier transfer in vertically coupled surface and buried InAs Stranski-Krastanov quantum dot system via ex-situ surface state passivation, Journal of Luminescence 226, (2020), 117470. (I. F. 3.6) (Q2)

Dr. Suryansh Dongre